Global GaN power device market

Global GaN power device market is set to witness a healthy CAGR of 29.45% in the forecast period of 2019- 2026.

Market Definition: Global GaN Power Device Market

GaN or gallium nitride is a material which is specially designed for the manufacturing of the semiconductor power devices and RF components and is also used as a replacement for silicon semiconductor. RF power device, GaN power module, power device, GaN power discreates devices and other are some of coomon type of GaN devices. These devices are widely used in applications such as radio frequency, power drives and supply and inverter. Gallium devices are widely used in application such as telecommunication, automotive, military, medical, and others. Increasing demand for electric device is the factor fuelling the growth of this market.

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Major Market Competitors/Players

Few of the major competitors currently working in the global GaN power device market are Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Exagan, VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman Corporation, Dialog Semiconductor and others

Market Segmentations:

By Device Type (Power Device, RF Power Device, GaN Power Modules, GaN Power Discrete Devices, GaN Power ICs), Voltage Range (600 Volt), Application (Power Drives, Supply and Inverter, Radio Frequency), Vertical (Telecommunications, Industrial, Automotive, Renewable, Consumer and Enterprise, Military, Defense and Aerospace, Medical), Technology (4H-SiC MOSFET, HEMT, Others), Wafer Material (GaN SiC, GaN Si), Wafer Size (Less than 150mm, 150mm-500mm, More than 500 mm), Geography (North America, Europe, Asia-Pacific, South America, Middle East and Africa)

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Market Drivers:

• Increasing awareness about of the wide bandgap property of GaN material will restrain the market growth
• Rising R&D investment in GaN will also propel market
• Growing demand for electric vehicle in automotive sector will also contribute as a factor for the growth of this market
• Growth in smartphone industry is also driving the market
• Increasing adoption of GaN RF power device in military, defense, and aerospace vertical will also drive market

Market Restraints:

• High cost of the material will restrain the market
• Increasing SiC devices in high-voltage power applications will also hamper market
• Shrinking path of the semiconductor power devices will also restrict market

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