Global Wide-Bandgap (WBG) Power Semiconductor Devices Market

Global wide-bandgap (WBG) power semiconductor devices market is set to witness a healthy CAGR of 38.15% in the forecast period of 2019- 2026.

Market Definition: Global Wide-Bandgap (WBG) Power Semiconductor Devices Market

Wide-bandgap semiconductors are those semiconductors which usually have large band gap. They are very useful as they help the devices so that they can work in high temperature, frequency and voltage. Silicon carbide, zinc oxide, diamond substrate and gallium nitride are some of the common material which are used for the manufacturing of WBS. They are widely used in the manufacturing of green and blue lasers and LED, military radar, radio frequency applications, industrial motor drives and others. Rising prevalence for energy- efficient electronic devices is the factor fuelling the market growth.

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Major Market Competitors/Players

Few of the major competitors currently working in the global wide-bandgap (WBG) power semiconductor devices market are Qorvo, Inc., United Silicon Carbide Inc., GaN Systems, STMicroelectronics, ROHM SEMICONDUCTOR., Transphorm Inc., Cree Inc., Infineon Technologies AG, Ceramicforum Co., Ltd., KEMET, Keysight Technologies, AKHAN Semiconductor Inc., Alpha and Omega Semiconductor., Reedholm Systems and others.

Market Segmentations: Global Wide-Bandgap (WBG) Power Semiconductor Devices Market

By Application (Renewable Energy, Automotive, Uninterruptable Power Supply, Industrial Motor Drives, Power Factor Correction, Others), Material (Diamond Substrate, Silicon Carbide (SIC), Zinc Oxide, Gallium Nitride (GAN), Others), Geography (North America, Europe, Asia-Pacific, South America, Middle East and Africa)

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Market Drivers:

• Increasing implementation of signal processing applications is driving market
• Rising foundry services for WBG semiconductor devices will also propel growth
• Increasing demand for energy- efficient electronic product among population
• Rising demand for UPS and PS systems will also contribute as a factor for the growth of this market

Market Restraints:

• High investment cost will restrain the market growth
• High material and substrate costs of SiC and GaN will also hamper the market growth

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