Global Silicon Carbide (SiC) Market Booming at a CAGR of 18.5% during the forecast by 2024

Analysis of Global Silicon Carbide (SiC) report:

The Global Silicon Carbide (SiC) Market accounted for USD 257.7 million in 2016 growing at a CAGR of 18.5% during the forecast period of 2017 to 2024. The upcoming market report contains data for historic year 2014, 2015, the base year of calculation is 2016 and the forecast period is 2017 to 2024.

Definition:

Silicon Carbide (SiC) is the compound of silicon and carbon. This is also termed as Carborundum. SiC exhibits advantageous properties such as, oxidation resistance, high strength, high thermal conductivity, high-temperature strength, high hardness, wear resistance, superior chemical inertness, low thermal expansion, high elastic modulus, low density, excellent thermal shock resistance. Moreover, it is widely incorporated into applications in various industries for instance, aerospace and aviation, automotive, electronics and semiconductors, medical and healthcare and military and defense, steel and energy. It holds demand in LEDs and lightening arrest.

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Major Market Drivers & Restraints:

• Reduced size of semiconductors and their increasing incorporation in wide range of applications
• Superior properties of SiC and technological developments
• Increasing substitution of existing pure silicon technology semiconductors
• SiC is an alternative to diamonds and can be used in drill tips or in abrasive.
• SiC based devices are expensive due to low manufacturing volume and low manufacturing yield
• Gallium nitride based devices competing with SiC based devices

Leading Key players profiled in this report are:

Some of the major players of the global silicon carbide market include AGSCO Corporation, Entegr is Inc., ESD-SIC BV, ESK-SIC GmbH, Carborundum Universal Limited, Gaddis Inc., Grindwell Norton limited, Snam Abrasives, Saint-Gobain Ceramics Materials GmbH, Infineon Technologies AG, CREE Inc. (Wolfspeed), ROHM Semiconductor, STMicroelectronics N.V., ON Semiconductor, Toshiba Corporation, General Electric, Fuji Electric Co. Ltd, Renesas Electronics Corporation, GeneSiC Semiconductor Inc., Global Power Technologies Group, TanKeBlue Semiconductor Co. Ltd.,United Silicon Carbide, Inc., STMicroelectronics N.V., Rohm Semiconductor, Pilegrowth Tech S.R.L, Norstel AB, and others.

Global Silicon Carbide (SiC) Market Segmentation:

• The SiC market is segmented on the basis of device into SiC discrete devices, and SiC bare die. The SiC discrete segment is further sub segmented into SiC MOSFET, SiC diode, and SIC module. On the basis of wafer size, the SiC market is segmented into 2 inch, 4 inch, and 6 inch. On the basis of application, the SiC market is segmented into RF device and cellular base station, power grid device, flexible AC transmission systems (FACTS), high-voltage direct current (HVDC), power supply and inverter, lighting control, industrial motor drive, flame detector, EV, motor drive, EV charging, electronic combat system, wind energy, and solar energy. On the basis of product, SiC market is segmented into black, green, refractory, coated, metallurgical, metallurgical briquettes and micro grit. On the basis of vertical, the SiC market is segmented into telecommunications, energy & power, automotive, renewable power generation, defense, chemicals, fabrication, information and communication technology (ICT), electronics & semiconductors, medical & healthcare, and industrial sector.
• On the basis of geography, silicon carbide market report covers data points for 28 countries across multiple geographies such as North America, South America, Europe, Asia-Pacific and Middle East & Africa.

The Global Silicon Carbide (SiC) market report provides the global market size of the main players in each region. Moreover, the report provides knowledge of the leading markets players within the Global Silicon Carbide (SiC) market. The industry changing factors for the market segments are explored in this report. This analysis report covers the growth factors of the worldwide market based on end-users. Market opportunities and recommendations for new investments are also encompassed in this report.

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Company Share Analysis:

The report for silicon carbide (SiC) include detailed vendor level analysis for market shares in 2016 for Global, North America, Europe, Asia Pacific, Middle East and Africa and South America specifically. Also impact and development analysis of key vendors is registered in the market and factored on the basis of Vendor Positioning Grid Analysis which measures the vendors strengths and opportunities against present market challenges, measure providers ability to identify or satisfy present market needs, map providers market vision to current and upcoming market dynamics among others. The report also measures technology life line curve and market time line to analyze and do more affective investments.

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